copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.2.0 features high ruggedness r ds( on ) ( max 16.8m ? )@v gs =10v gate charge ( typ 41nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. n - channel d - pak/to - 220 mosfet absolute maximum ratings symbol parameter value unit to - 252 to - 220 v dss drain to source voltage 60 v i d continuous drain current (@t c =25 o c) 50* a continuous drain current (@t c =100 o c) 32* a i dm drain current pulsed (note 1) 200 a v gs gate to source voltage 20 v e as single pulsed avalanche energy (note 2) 180 mj e ar repetitive avalanche energy (note 1) 23.4 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 87.4 114.7 w derating factor above 25 o c 0.7 0.9 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit to - 252 to - 220 r thjc thermal resistance, junction to case 1.43 1.09 o c/w r thcs thermal resistance, case to sink o c/w r thja thermal resistance, junction to ambient 71.8 53.1 o c /w 1/6 *. drain current is limited by junction temperature. bv dss : 60v i d : 50a r ds(on) : 16.8m ? 1 2 3 1. gate 2. drain 3. source 1 2 3 to - 252 SW50N06T samwin item sales type marking package packaging 1 sw d 50n06 SW50N06T to - 252 reel 2 sw p 50n06 SW50N06T to - 220 tube order codes to - 220 1 2 3
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.2.0 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 60 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.07 v/ o c i dss drain to source leakage current v ds =60v, v gs =0v 1 ua v ds =48v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =20v, v ds =0v 100 na v gs = - 20v, v ds =0v - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 4 v r ds(on) drain to source on state resistance v gs =10v, i d = 25a 13 16.8 m ? g fs forward transconductance vds = 20v, id = 20a 58 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 2178 pf c oss output capacitance 195 c rss reverse transfer capacitance 141 t d(on) turn on delay time v ds =30v, i d =50a, r g =25? (note 4,5) 26 ns tr rising time 80 t d(off) turn off delay time 82 t f fall time 46 q g total gate charge v ds =50v, v gs =10v, i d =50a (note 4,5) 41 nc q gs gate - source charge 7 q gd gate - drain charge 19 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 50 a i sm pulsed source current 200 a v sd diode forward voltage drop. i s =50a, v gs =0v 1.5 v t rr reverse recovery time i s =50a, v gs =0v, di f / dt =100a/us 20 ns q rr breakdown voltage charge 16 n c . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 0.4 m h, i as = 30a, v dd = 30v, r g =25?, starting t j = 25 o c 3. i sd 50a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. SW50N06T samwin 2/6
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.2.0 fig. 1. on - state characteristics 3/6 SW50N06T samwin fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics fig. 4. on state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.2.0 SW50N06T samwin 4/6 fig. 7. maximum safe operating area to - 252 fig. 8. transient thermal response curve to - 252 fig. 9. maximum safe operating area to - 220 fig. 10. transient thermal response curve to - 220 fig. 11. c apacitance characteristics
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.2.0 v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 12. gate charge test circuit & waveform fig. 13. switching time test circuit & waveform fig. 14. unclamped inductive switching test circuit & waveform 5/6 SW50N06T samwin v ds same type as dut dut v gs 5.5ma q g q gs q gd v gs charge nc 10v
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.2.0 fig. 15. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd SW50N06T samwin 6/6
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